Forty-nanometer InAs HEMT devices fabricated by two-step recess and Pt-buried gate were demonstrated for low-noise and low-power millimeter wave applications. The device exhibited a high transconductance of 1650 mS/mm at a drain voltage of 0.5 V. Improvement of the current-gain cutoff frequency from
β¦ LIBER β¦
Improvement on the noise performance of InAs-based HEMTs with gate sinking technology
β Scribed by Heng-Tung Hsu; Chien-I Kuo; Edward Y. Chang; Fang-Yao Kuo
- Book ID
- 104052667
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 398 KB
- Volume
- 87
- Category
- Article
- ISSN
- 0167-9317
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Improvement in RF performance of 40-nm I
β
Chien-I Kuo; Heng-Tung Hsu; Chien-Ying Wu; Edward Y. Chang; Yu-Lin Chen; Wee-Chi
π
Article
π
2010
π
Elsevier Science
π
English
β 356 KB
The impact of post gate annealing on mic
β
Dongmin Liu; Jaesun Lee; Wu Lu
π
Article
π
2007
π
Elsevier Science
π
English
β 156 KB
Improving the performance of a 10 Gbit/s
β
B. Neto; P. AndrΓ©
π
Article
π
2006
π
John Wiley and Sons
π
English
β 535 KB
## Abstract In this letter we describe the use of tunable chromatic dispersion compensator based on chirped fiber Bragg grating to improve the performance of a 10 Gbit/s optical fiber communication system. Tunable compensation is achieved by applying temperature gradients along the grating longitud
A HOME-BASED OCCUPATIONAL THERAPY ENVIRO
β
Janet Fricke; Laura Collister; Carolyn Unsworth
π
Article
π
2004
π
John Wiley and Sons
π
English
β 79 KB
Renal insufficiency and anemia are indep
β
Langston, Robert D.; Presley, Rodney; Flanders, W. Dana; Mcclellan, William M.
π
Article
π
2003
π
Nature Publishing Group
π
English
β 373 KB