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Improvement of the crystallinity of 3C-SiC films by lowering the electron temperatures in the afterglow plasma region using triode plasma CVD

✍ Scribed by K. Yasui; N. Ninagawa; T. Akahane


Book ID
107457522
Publisher
Springer US
Year
1997
Tongue
English
Weight
467 KB
Volume
26
Category
Article
ISSN
0361-5235

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