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Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers

โœ Scribed by Y.B. Tao; Z.Z. Chen; T.J. Yu; Y. Yin; X.N. Kang; Z.J. Yang; G.Z. Ran; G.Y. Zhang


Book ID
108166174
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
666 KB
Volume
318
Category
Article
ISSN
0022-0248

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Influence of the TEGa flow on the optica
โœ Shanjin Huang; Bingfeng Fan; Yulun Xian; Zhiyuan Zheng; Zhisheng Wu; Hao Jiang; ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 789 KB

We have investigated the influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells (MQWs) with an indium composition around 20%. The samples with five-pairs InGaN/GaN MQWs were grown on sapphire substrates by metalorganic chemical vapor deposition. Photo