Improvement of process parameters for polycrystalline silicon carbide low pressure chemical vapor deposition on 150mm silicon substrate using monomethylsilane as precursor

✍ Scribed by Ajayakumar, A.; Maruthoor, S.; Fuchs, T.; Rohlfing, F.; Jakovlev, O.; Wilde, J.; Reinecke, H.

• Book ID: 121449796
• Publisher: Elsevier Science
• Year: 2013
• Tongue: English
• Weight: 556 KB
• Volume: 536
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/j.tsf.2013.03.053