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Improvement of crystal quality and laser characteristics by zero net strain structure

✍ Scribed by T. Takiguchi; K. Goto; M. Takemi; A. Takemoto; T. Aoyagi; H. Watanabe; Y. Mihashi; S. Takamiya; S. Mitsui

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
405 KB
Volume
145
Category
Article
ISSN
0022-0248

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Dependence of oxygen partial pressures on structural and electrical characteristics of HfAlO (Hf:Al ΒΌ 1:1) high-k gate dielectric ultra-thin films grown on the compressively strained Si 83 Ge 17 by pulsed-laser deposition were investigated. The microstructure and the interfacial structure of the HfA