Improvement of breakdown characteristics of an AlGaN/GaN HEMT with a U-type gate foot for millimeter-wave power application

✍ Scribed by Kong, Xin; Wei, Ke; Liu, Guo-Guo; Liu, Xin-Yu

• Book ID: 121730849
• Publisher: IOP Publishing
• Year: 2012
• Tongue: English
• Weight: 652 KB
• Volume: 21
• Category: Article
• ISSN: 1674-1056
• DOI: 10.1088/1674-1056/21/12/128501