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Improvement in switching characteristics of silicon diodes through a selective zone of defects produced by 6 MeV electrons

✍ Scribed by Priyashree S. Bhave; Sharad T. Chavan; Vasant N. Bhoraskar


Book ID
113285025
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
490 KB
Volume
95
Category
Article
ISSN
0168-583X

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