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Improvement in dark current characteristics and long-term stability of mesa InGaAs/InP p-i-n photodiodes with two-step SiN/sub x/ surface passivation

✍ Scribed by Huang, R.-T.; Renner, D.


Book ID
119788574
Publisher
IEEE
Year
1991
Tongue
English
Weight
325 KB
Volume
3
Category
Article
ISSN
1041-1135

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