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Improved vertical MOSFET performance using an epitaxial channel and a stacked silicon-insulator structure

✍ Scribed by Uchino, T; Gili, E; Tan, L; Buiu, O; Hall, S; Ashburn, P


Book ID
121007336
Publisher
Institute of Physics
Year
2012
Tongue
English
Weight
358 KB
Volume
27
Category
Article
ISSN
0268-1242

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