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Improved subthreshold characteristics in tunnel field-effect transistors using shallow junction technologies

โœ Scribed by Chang, Hsu-Yu; Chopra, Saurabh; Adams, Bruce; Li, Jiping; Sharma, Shashank; Kim, Yihwan; Moffatt, Steve; Woo, Jason C.S.


Book ID
123364442
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
533 KB
Volume
80
Category
Article
ISSN
0038-1101

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Suppression of the tunneling effect by s
โœ Y Fu; M Willander ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 254 KB

We study the quantum wave transport in nanoscale field-effect transistors. It has been shown that the tunneling effect between the source and the drain in an ultra-short channel transistor significantly degrades the control of the drain current by the gate. However, the tunneling effect is suppresse