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Improved Schottky Contacts onn-Type 4H-SiC Using ZrB2Deposited at High Temperatures

✍ Scribed by T.N. Oder; P. Martin; A.V. Adedeji; T. Isaacs-Smith; J.R. Williams

No coin nor oath required. For personal study only.

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Improved Ni Schottky Contacts onn-Type 4

✍ T. N. Oder; T. L. Sung; M. Barlow; J. R. Williams; A. C. Ahyi; T. Isaacs-Smith 📂 Article 📅 2009 🏛 Springer US 🌐 English ⚖ 268 KB