Improved Responsivity of AlGaN-Based Resonant Cavity-Enhanced UV Photodetectors Grown on Sapphire by RF-MBE
✍ Scribed by Yonemaru, M. ;Kikuchi, A. ;Kishino, K.
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 89 KB
- Volume
- 192
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
AlGaN-based resonant cavity-enhanced ultraviolet metal-semiconductor-metal photodetectors (PDs) were grown on sapphire substrates without metalorganic chemical vapor deposition (MOCVD)-grown GaN templates by radio frequency plasma-assisted molecular beam epitaxy (RF-MBE). In the resonant cavity-enhanced (RCE) detection scheme, the responsivity of PDs is enhanced dramatically at the resonant wavelength. In the experiment, the responsivity was enhanced by the resonant cavity effect, selectively at wavelengths of 364 and 357 nm, by a factor of about two. The peak responsivities were 1.2 and 1.5 A/W at 364 and 357 nm, respectively.