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Improved resistive switching phenomena observed in SiN x -based resistive switching memory through oxygen doping process

✍ Scribed by Park, Ju Hyun; Kim, Hee-Dong; Hong, Seok Man; Yun, Min Ju; Jeon, Dong Su; Kim, Tae Geun


Book ID
121787137
Publisher
John Wiley and Sons
Year
2013
Tongue
English
Weight
612 KB
Volume
8
Category
Article
ISSN
1862-6254

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