Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions

✍ Scribed by Li, X.; Okur, S.; Zhang, F.; Hafiz, S. A.; Avrutin, V.; Özgür, Ü.; Morkoç, H.; Jarašiūnas, K.

• Book ID: 120162406
• Publisher: American Institute of Physics
• Year: 2012
• Tongue: English
• Weight: 655 KB
• Volume: 101
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.4739419