✦ LIBER ✦
Improved performance of submicrometer-gate GaAs MESFETs with an Al 0.3Ga0.7As buffer layer grown by metal organic vapor phase epitaxy
✍ Scribed by Hiruma, K.; Mori, M.; Yanokura, E.; Mizuta, H.; Takahashi, S.
- Book ID
- 114535016
- Publisher
- IEEE
- Year
- 1989
- Tongue
- English
- Weight
- 540 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0018-9383
- DOI
- 10.1109/16.19931
No coin nor oath required. For personal study only.