Improved pentacene device characteristics with sol–gel SiO2 dielectric films

✍ Scribed by T. Cahyadi; H.S. Tan; E.B. Namdas; S.G. Mhaisalkar; P.S. Lee; Z.-K. Chen; C.M. Ng; F.Y.C. Boey

• Book ID: 104075843
• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 460 KB
• Volume: 8
• Category: Article
• ISSN: 1566-1199
• DOI: 10.1016/j.orgel.2006.12.006

✦ Synopsis

The interfacial interactions between semiconductors and gate dielectrics have a profound influence on the device characteristics of field effect transistors (FETs). This paper reports on the concept of introducing a sol-gel SiO 2 as inorganic capping layer to significantly improve device characteristics of pentacene-based FETs. The smoother film surfaces of solgel SiO 2 (1.9 A ˚root-mean-square) induced larger pentacene grain sizes, and led to hole mobilities of 1.43 cm 2 /Vs, on-off ratio of 10 7 , and a subthreshold swing of 102 mV/decade when operating at À20 V.