✦ LIBER ✦

Improved mobility-lifetime product of holes in a-Si:H n-i-p devices: a consequence of structural relaxation?

✍ Scribed by Mireille Cuniot; Jean Dixmier; Pere Roca i Cabarrocas

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Stability of the mobility-lifetime produ

✍ F. Wang; R. Schwarz 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 384 KB

Influence of light-soaking and annealing

✍ E. Morgado 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 274 KB

Evidence of charge storage in a-Si:H p-i

✍ Jianyong Liu; Baojie Yan; Lifeng Shi; Xinhua Geng; Zhonglin Sun; Wenyuan Xu 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 237 KB

Effect of light-induced degradation on p

✍ Regis Vanderhaghen; Rashid Amokrane; Daxing Han; Marvin Silver 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 264 KB

A comparative study of methods of measur

✍ Derdouri, M.; Leturcq, P.; Munoz-Yague, A. 📂 Article 📅 1980 🏛 IEEE 🌐 English ⚖ 512 KB

Determination of the mobility gap of int

✍ Pieters, B. E.; Stiebig, H.; Zeman, M.; van Swaaij, R. A. C. M. M. 📂 Article 📅 2009 🏛 American Institute of Physics 🌐 English ⚖ 586 KB