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Improved LPE techniques for low threshold lasers at 1.55 μm in the quaternary In-Ga-As-P/InP system

✍ Scribed by A.W. Nelson; L.D. Westbrook; E.A.D. White


Publisher
Elsevier Science
Year
1982
Tongue
English
Weight
806 KB
Volume
58
Category
Article
ISSN
0022-0248

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