Improved Linearity for Low-Noise Applications in 0.25-$ \mu\hbox{m}$ GaN MISHEMTs Using ALD $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

✍ Scribed by Liu, Z H; Ng, G I; Arulkumaran, S; Maung, Y K T; Teo, K L; Foo, S C; Sahmuganathan, V

• Book ID: 126500330
• Publisher: IEEE
• Year: 2010
• Tongue: English
• Weight: 316 KB
• Volume: 31
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/LED.2010.2051136