Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide

✍ Scribed by Okamoto, D.; Yano, H.; Hirata, K.; Hatayama, T.; Fuyuki, T.

• Book ID: 117993076
• Publisher: IEEE
• Year: 2010
• Tongue: English
• Weight: 167 KB
• Volume: 31
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/led.2010.2047239