Improved electrical properties of silicon dioxide films for MOS gate dielectrics grown in an inductively coupled r.f. plasma

✍ Scribed by A.J. Choksi; R. Lal; A.N. Chandorkar

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 473 KB
• Volume: 220
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/0040-6090(92)90547-o