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Improved Conductance Method for Determining Interface Trap Density of Metal-Oxide-Semiconductor Device with High Series Resistance

✍ Scribed by Yang, Hyundoek; Son, Yunik; Choi, Sangmoo; Hwang, Hyunsang

Book ID
127382689
Publisher
Institute of Pure and Applied Physics
Year
2005
Tongue
English
Weight
191 KB
Volume
44
Category
Article
ISSN
0021-4922

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In this study, the interface trap density of metal-oxide-semiconductor (MOS) devices with Pr 2 O 3 gate dielectric deposited on Si is determined by using a conductance method. In order to determine the exact value of the interface trap density, the series resistance is estimated directly from the im