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Improved compositional uniformity of InGaAsP grown by low pressure metalorganic vapor phase epitaxy using tertiary butyl phosphine as the phosphorus source

✍ Scribed by J.L. Zilko; P.S. Davisson; L. Luther; K.D.C. Trapp


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
486 KB
Volume
124
Category
Article
ISSN
0022-0248

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