Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si

Ultraviolet GaN-based nanocolumn light-e

Ultraviolet GaN-based nanocolumn light-emitting diodes grown on n-(111) Si substrates by rf-plasma-assisted molecular beam epitaxy

✍ Sekiguchi, Hiroto ;Kato, Kei ;Tanaka, Jo ;Kikuchi, Akihiko ;Kishino, Katsumi 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 335 KB

## Abstract We report the fabrication of GaN/AlGaN nanocolumn LEDs on n‐(111) Si substrates by RF‐MBE for the first time. Clear diode characteristics with a turn‐on voltage of 4 V and an ultraviolet emission spectrum with a peak wavelength of 354 nm were observed at room temperature. When the Al co