Improved Analog Performance in Strained-Si MOSFETs Using the Thickness of the Silicon–Germanium Strain-Relaxed Buffer as a Design Parameter

✍ Scribed by Alatise, O.M.; Kwa, K.S.K.; Olsen, S.H.; O'Neill, A.G.

• Book ID: 114619782
• Publisher: IEEE
• Year: 2009
• Tongue: English
• Weight: 300 KB
• Volume: 56
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2009.2030721