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Importance of the correct Fermi energy on the calculation of defect formation energies in semiconductors

โœ Scribed by West, D.; Sun, Y. Y.; Zhang, S. B.


Book ID
127053477
Publisher
American Institute of Physics
Year
2012
Tongue
English
Weight
716 KB
Volume
101
Category
Article
ISSN
0003-6951

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๐Ÿ“œ SIMILAR VOLUMES


On the energy of formation of defects
โœ C. Falter; W. Zierau; P. Varotsos ๐Ÿ“‚ Article ๐Ÿ“… 1978 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 361 KB
On the temperature dependence of the ene
โœ L.M Levinson ๐Ÿ“‚ Article ๐Ÿ“… 1966 ๐Ÿ› Elsevier Science โš– 246 KB

was about 0.2 mm in dia. Creep tests under constant tensile stresses were carried out in argon atmosphere. The temperature dependence of steady-state creep rates under various stresses is shown in Fig. 1 from which three different stages can be clearly recognized; one in the high temperature region