✦ LIBER ✦
Implanted p-channel MOS transistor threshold voltage dependence on impurity segregation during oxidation: Andrzej A. Czerwinksi and Jan Z. Olenski Electron Technology 12 (4), 35 (1979)
- Book ID
- 104157135
- Publisher
- Elsevier Science
- Year
- 1984
- Tongue
- English
- Weight
- 186 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0026-2692
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✦ Synopsis
continued from page 75 precious metal-based materials. These differences are primarily related to the ease of oxidation of the solder alloy powders. The relationship between solder flux chemistry and the reactivity of solder powders is described in terms of functional performance.
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