Impedance Study of GaN and InGaN Semiconductor Anion Selective Electrodes

Evaluation of GaN and In0.2Ga0.8N Semico

Evaluation of GaN and In0.2Ga0.8N Semiconductors as Potentiometric Anion Selective Electrodes

✍ Rozalina Dimitrova; Lionel Catalan; Dimiter Alexandrov; Aicheng Chen 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 334 KB

The response of potentiometric anion selective electrodes consisting of undoped GaN or In 0.2 Ga 0.8 N films grown on Al 2 O 3 (sapphire) was measured in electrolyte solutions of F À , NO 3 À , Cl À , SCN À , ClO 4 À or Br À anions at concentrations ranging from 10 À6 to 10 À1 M. The slope of the li