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Impact of ZnTe buffer on the electrical properties of n-type GaSb:Te films

✍ Scribed by Siyoung Kim; Woong Lee; Mina Jung; Jiho Chang; Aung Khaing Nyi; Hongchan Lee; Joonsuk Song; Dongcheol Oh; Seunghwan Park; Takafumi Yao


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
283 KB
Volume
256
Category
Article
ISSN
0169-4332

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πŸ“œ SIMILAR VOLUMES


Effect of a silicon nitride buffer layer
✍ B.Y. Wang; Hao Wang; C. Ye; Y. Wang; Y. Ye; W.F. Wang πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 495 KB

Ta 2 O 5 films with a buffer layer of silicon nitride of various thicknesses were deposited on Si substrate by reactive sputtering and submitted to annealing at 700 Β°C in nitrogen atmosphere. The microstructure and the electrical properties of thin films were studied. It was found that with a buffer