Impact of Structural Properties on the Mechanisms of Optical Amplification in Cubic GaInN

✍ Scribed by J. Holst; A. Hoffmann; I. Broser; D. Rudloff; F. Bertram; T. Riemann; J. Christen; T. Frey; D.J. As; D. Schikora; K. Lischka

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 173 KB
• Volume: 216
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/(sici)1521-3951(199911)216:1<471::aid-pssb471>3.0.co;2-o

✦ Synopsis

The structural and the optical properties of cubic GaInN MBE-grown on GaAs substrates are investigated using scanning electron-and cathodoluminescence microscopy, time-resolved and time-integrated photoluminescence spectroscopy as well as gain measurements at 2 K and 300 K. The In content is ranging from 3% to 30%. From the carrier dynamics localized states are proposed to be responsible as recombination mechanism. From temperature-and intensity-dependent gain measurements, the identification of the gain processes was possible. Optical gain values up to 60 cm ± ±1 were observed at wavelengths up to 500 nm, indicating the advantage of this material system due to the lack of detrimental pyro-and piezoelectric fields. The degree of In fluctuations directly determines the optical quality and the efficiency of optical amplification of the samples.