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Impact of strain and source/drain engineering on the low frequency noise behaviour in n-channel tri-gate FinFETs

✍ Scribed by W. Guo; B. Cretu; J.-M. Routoure; R. Carin; E. Simoen; A. Mercha; N. Collaert; S. Put; C. Claeys


Book ID
108271693
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
766 KB
Volume
52
Category
Article
ISSN
0038-1101

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