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Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors

✍ Scribed by M. Schmidt; R.A. Minamisawa; S. Richter; R. Luptak; J.-M. Hartmann; D. Buca; Q.T. Zhao; S. Mantl

Book ID: 113916091
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 952 KB
Volume: 71
Category: Article
ISSN: 0038-1101
DOI: 10.1016/j.sse.2011.10.018

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