Impact of compositionally graded base regions on the DC and RF properties of reduced turn-on voltage InGaP-GaInAsN DHBTs

✍ Scribed by Stevens, K.S.; Welty, R.J.; Welser, R.E.; Landini, B.E.; Asbeck, P.M.; Shih-Chieh Hung; Wen-Pin Lu; Shun-Ching Feng

• Book ID: 114617563
• Publisher: IEEE
• Year: 2004
• Tongue: English
• Weight: 676 KB
• Volume: 51
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2004.834905