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Impact of AlGaN on luminescence capability of rare-earth ions in AlGaN

✍ Scribed by Akihiro Wakahara


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
523 KB
Volume
28
Category
Article
ISSN
0925-3467

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Stimulated emission is studied in a hexagonal AlGaN/GaN/AlGaN double heterostructure grown on a (0 0 0 1) sapphire substrate by low pressure (200 mbar) metallorganic vapor phase epitaxy. A sharp increase in the edge emitted luminescence intensity is obtained above a threshold excitation density of 4