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Impact of Al interdiffusion on optical properties in GaSb/AlGaSb multiple quantum wells

โœ Scribed by M. Lomascolo; P.V. Giugno; R. Cingolani; C. Gerardi; M. Leroux; J. Massies

Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
93 KB
Volume
2
Category
Article
ISSN
1386-9477

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Recent progress in the development of materials and devices, based on nitrides semiconductors and their ternary alloys, for high power, high-temperature applications has been remarkable. The AlInGaN quaternary alloy exhibits interesting features, as its emission intensity is higher than the ternary