𝔖 Bobbio Scriptorium
✦   LIBER   ✦

III–V semiconductor properties for high temperature electronics

✍ Scribed by Hans L. Hartnagel


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
602 KB
Volume
29
Category
Article
ISSN
0921-5107

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Ultra-high speed semiconductor devices a
✍ Takashi Mizutani; K. Hirata; M. Hirayama; A. Ishida 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 538 KB

This paper reviews recent progress in GaAs MESFETs and HBTs for high speed integrated circuits. SAINT MESFETs have succeeded in scaling down gate lengths to O. 1 -O. 15/zm and have realized propagation delay times of 5.9 ps gate -~. A multiplexer and demultiplexer operating at a high bit rate of 11.

Structures, Energetics and Electronic Pr
✍ M. Haugk; J. Elsner; Th. Frauenheim; T.E.M. Staab; C.D. Latham; R. Jones; H.S. L 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 983 KB

A parallel implementation of the selfconsistent-charge density-functional based tight-binding (SCC-DFTB) method is used to examine large scale structures in III ±V semiconductors. We firstly describe the parallel implementation of the method and its efficiency. We then turn to applications of the pa