IIIB-3 a new self-aligned double source/drain ion implantation technique - enhanced polysilicon oxidation

✍ Scribed by Hsia, S.; Fatemi, R.; Teng, T.C.; Sun, S.C.; Skinner, C.

• Book ID: 114593899
• Publisher: IEEE
• Year: 1981
• Tongue: English
• Weight: 181 KB
• Volume: 28
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/t-ed.1981.20543