This book gives a clear presentation of the necessary basics of semiconductor and device physics and engineering. It introduces readers to fundamental issues that will enable them to follow the latest technological research. It also covers important applications, including LED and lighting, semicond
III-V Nitride Semiconductors: Applications and Devices
β Scribed by Edward T. Yu, M. O. Manasreh
- Publisher
- CRC Press
- Year
- 2002
- Tongue
- English
- Leaves
- 715
- Series
- Optoelectronic Properties of Semiconductors and Superlattices, 16
- Category
- Library
No coin nor oath required. For personal study only.
β¦ Synopsis
The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.
β¦ Table of Contents
Cover
Half Title
Series
Title
Copyright
CONTENTS
About the Series
Preface
Introduction
1 Ohmic Contacts to GaN
2 Characterization of Schottky Contacts on Nitride Semiconductors
3 Integration of GaN Thin Films with Dissimilar Substrate Materials by Wafer Bonding and Laser Lift-Off
4 Spontaneous and Piezoelectric Polarization in Nitride Heterostructures
5 AlGaN/GaN High Electron Mobility Transistors
6 Two-Dimensional Electron Gas Transport Properties in AlGaN/GaN Heterostructure Field-Effect Transistors
7 Electron Transport in Wide-Bandgap Semiconductors and Heterostructures
8 GaN Metal-Semiconductor Field-Effect Transistor
9 Piezoelectric Effect in Group-III Nitride-Based Heterostructures and Quantum Wells
10 AlGaInN MQW Laser Diodes
11 Blue Vertical Cavity Surface Emitting Lasers and InGaN Quantum Dot Lasers
12 III-Nitride-Based UV Photodetectors
13 III-Nitride Ultraviolet Photodetectors
14 AlGaN UV Photodetectors
Index
π SIMILAR VOLUMES
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This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial ac
<p>A View of the Past, and a Look into the Future by a Pioneer By Jacques I. Pankove This forword will be a brief review of important developments in the early and recent history of gallium nitride, and also a perspective on the current and future evolution of this exciting field. Gallium nitride (G
This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium nitride and its related compounds enable the fabrication of highly efficient light-emitting diodes and lasers for a broad spectrum of wavelengths, ranging from r