IIA-4 The effect of buried p-doped layers on the current saturation mechanism in AlGaAs/InGaAs/GaAs MODFET's

✍ Scribed by Anderson, S.F.; Schaff, W.J.; Tasker, P.J.; Foisy, M.C.; Wang, G.W.; Eastman, L.F.

• Book ID: 114596132
• Publisher: IEEE
• Year: 1987
• Tongue: English
• Weight: 167 KB
• Volume: 34
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/t-ed.1987.23248