✦ LIBER ✦
[IEEE Tutorial (ICICDT) - Grenoble, France (2008.06.2-2008.06.4)] 2008 IEEE International Conference on Integrated Circuit Design and Technology and Tutorial - Low-voltage 6T FinFET SRAM cell with high SNM using HfSiON/TiN gate stack, fin widths down to 10nm and 30nm gate length
✍ Scribed by Collaert, N.; von Arnim, K.; Rooyackers, R.; Vandeweyer, T.; Mercha, A.; Parvais, B.; Witters, L.; Nackaerts, A.; Altamirano Sanchez, E.; Demand, M.; Hikavyy, A.; Demuynck, S.; Devriendt, K.; Bauer, F.; Ferain, I.; Veloso, A.; De Meyer, K.; Biesemans, S.; Jurczak, M.
- Book ID
- 121193772
- Publisher
- IEEE
- Year
- 2008
- Weight
- 475 KB
- Category
- Article
- ISBN
- 1424418100
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