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[IEEE Third International Conference on Electronics, Circuits, and Systems - Rodos, Greece (13-16 Oct. 1996)] Proceedings of Third International Conference on Electronics, Circuits, and Systems - Effects of Ge profiles on base transit time and base resistance of SiGe HBT's

✍ Scribed by Song, J.; Yuan, J.S.; Schwierz, F.; Schipanski, D.

Book ID: 120034457
Publisher: IEEE
Year: 1996
Weight: 265 KB
Volume: 2
Category: Article
ISBN-13: 9780780336506
DOI: 10.1109/ICECS.1996.584522

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