[IEEE Technical Digest., International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1988)] Technical Digest., International Electron Devices Meeting - New resonant tunneling bipolar transistor (RTBT) with multiple negative differential resistance characteristics operating at room temperature with large current gain

✍ Scribed by Sen, S.; Capasso, F.; Cho, A.Y.; Sivco, D.L.

• Book ID: 125450807
• Publisher: IEEE
• Year: 1988
• Weight: 256 KB
• Category: Article
• DOI: 10.1109/iedm.1988.32940