[IEEE Technical Digest., International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1988)] Technical Digest., International Electron Devices Meeting - Doping of n/sup +/ and p/sup +/ polysilicon in a dual-gate CMOS process

✍ Scribed by Wong, C.Y.; Sun, J.Y.; Taur, Y.; Oh, C.S.; Angelucci, R.; Davari, B.

• Book ID: 120832592
• Publisher: IEEE
• Year: 1988
• Weight: 233 KB
• Category: Article
• DOI: 10.1109/IEDM.1988.32800