[IEEE Related Materials (IPRM) - Versailles, France (2008.05.25-2008.05.29)] 2008 20th International Conference on Indium Phosphide and Related Materials - Tuning InAs/InP(001) quantum dot emission from 1.55 to 2 μm by varying cap-layer growth rate in metalorganic vapor phase epitaxy

✍ Scribed by Michon, A.; Hostein, R.; Patriarche, G.; Beaudoin, G.; Gogneau, N.; Beveratos, A.; Robert-Philip, I.; Sagnes, I.; Laurent, S.; Sauvage, S.; Boucaud, P.

• Book ID: 120233532
• Publisher: IEEE
• Year: 2008
• Weight: 296 KB
• Category: Article
• ISBN: 1424422582
• DOI: 10.1109/ICIPRM.2008.4702909