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[IEEE Related Materials (IPRM) - Newport Beach, CA, USA (2009.05.10-2009.05.14)] 2009 IEEE International Conference on Indium Phosphide & Related Materials - Fundamental oscillation up TO 831 GHz in GaInAs/AlAs resonant tunneling diode

✍ Scribed by Suzuki, S.; Teranishi, A.; Hinata, K.; Asada, M.; Sugiyama, H.; Yokoyama, H.

No coin nor oath required. For personal study only.

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