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[IEEE Related Materials (IPRM) - Newport Beach, CA, USA (2009.05.10-2009.05.14)] 2009 IEEE International Conference on Indium Phosphide & Related Materials - Effect of sulfur passivation and dielectric capping on the dark current of InGaAs/InP PIN photodetectors

✍ Scribed by Sheela, D.; DasGupta, Nandita

No coin nor oath required. For personal study only.

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