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[IEEE ISCAS'99. 1999 IEEE International Symposium on Circuits and Systems. VLSI - Orlando, FL, USA (30 May-2 June 1999)] ISCAS'99. Proceedings of the 1999 IEEE International Symposium on Circuits and Systems VLSI (Cat. No.99CH36349) - Modeling and parameter extraction technique for high-voltage MOS device

✍ Scribed by Myono, T.; Nishibe, E.; Kikuchi, S.; Iwatsu, K.; Suzuki, T.; Sasaki, Y.; Itoh, K.; Kobayashi, H.

Book ID: 115452295
Publisher: IEEE
Year: 1999
Tongue: English
Weight: 372 KB
Edition: 1999
Volume: 6
Category: Article
ISBN-13: 9780780354715
DOI: 10.1109/iscas.1999.780137

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