[IEEE International Electron Devices Meeting. Technical Digest - Washington, DC, USA (2-5 Dec. 2001)] International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) - Examination of design and manufacturing issues in a 10 nm double gate MOSFET using nonequilibrium Green's function simulation

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✍ Bin Yu, ; Haihong Wang, ; Joshi, A.; Qi Xiang, ; Effiong Ibok, ; Ming-Ren Lin, 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 300 KB

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✍ Yang-Kyu Choi, ; Lindert, N.; Peiqi Xuan, ; Tang, S.; Daewon Ha, ; Anderson, E.; 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 596 KB

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✍ Mochida, Y.; Takano, T.; Gambe, H. 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 947 KB

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✍ Palmour, J.W.; Sheppard, S.T.; Smith, R.P.; Allen, S.T.; Pribble, W.L.; Smith, T 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 366 KB

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✍ Esseni, D.; Mastrapasqua, M.; Fiegna, C.; Celler, G.K.; Selmi, L.; Sangiorgi, E. 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 334 KB

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✍ Ng, K.K.; Rafferty, C.S.; Hong-Ih Cong, 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 300 KB