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[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - Structural dependence of dielectric breakdown in ultra-thin gate oxides and its relationship to soft breakdown modes and device failure

✍ Scribed by Wu, E.; Nowak, E.; Aitken, J.; Abadeer, W.; Han, L.K.; Lo, S.

Book ID: 125847677
Publisher: IEEE
Year: 1998
Weight: 350 KB
Category: Article
ISBN-13: 9780780347748
DOI: 10.1109/IEDM.1998.746316

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