[IEEE Instruments (ICEMI) - Chengdu, China (2011.08.16-2011.08.19)] IEEE 2011 10th International Conference on Electronic Measurement & Instruments - Analysis of Si3N4 passivation effect by self-consistent electro-thermal-mechanical simulation in AlGaN/GaN heterostructure HEMTs

✍ Scribed by Kumar, Raunak; Prakash, Abijith; Prabowo, Briliant Adhi; Anumeha, ; Jungruey, Tsai; Sheu, Gene; Yang Shaoming, ; Guo Yufeng,

• Book ID: 120569128
• Publisher: IEEE
• Year: 2011
• Weight: 329 KB
• Category: Article
• ISBN: 1424481589
• DOI: 10.1109/ICEMI.2011.6037721